产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 125W,
VISHAY
场效应管, MOSFET, N沟道
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 70 A, 60 V, 5.8 mohm, 10 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 80 V, 28 mohm, 10 V, 3 V
(EN)SEMELAB
晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 95 A, 60 V, 0.0049 ohm, 10 V, 3.7 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 200V, 18A, TO-220
(EN)SEMELAB
晶体管, MOSFET, P沟道, 8 A, -200 V, 1.5 ohm, -1.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 17 A, 500 V, 0.162 ohm, 10 V, 3 V
(EN)SEMELAB
晶体管, MOSFET, N沟道, 8 A, 200 V, 1.5 ohm, 1.5 V
(EN)
SEMELAB
晶体管, MOSFET, P沟道, 8 A, -200 V, 1.5 ohm, -1.5 V
(EN)NTE ELECTRONICS
场效应管, MOSFET, N沟道, 400V, 10A, TO-220
(EN)
VISHAY
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0027 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 130 A, 30 V, 0.0019 ohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 500 V, 520 mohm, 10 V, 3.75 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 10V, 18A TO-204AE
(EN)VISHAY
晶体管, MOSFET, N沟道, 17 A, 200 V, 180 mohm, 5 V, 2 V
(EN)
NTE ELECTRONICS
芯片, MOSFET增强型高速开关, 125W, 18A
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, 50 A, -30 V, 25 mohm, 5 V, -1.5 V
(EN)
VISHAY
场效应管, MOSFET, P通道, -60V, 0.015Ω, -55A
(EN)INFINEON
晶体管, MOSFET, N沟道, 11.6 A, 560 V, 0.34 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 69 A, 100 V, 0.0099 ohm, 10 V, 1.84 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 30 V, 0.0006 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 525 V, 0.41 ohm, 10 V, 3.75 V
(EN)
