产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 1W,
VISHAY
晶体管, MOSFET, N沟道, 1.3 A, 200 V, 800 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.7 A, 55 V, 160 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 2.6A, SOT-223
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
VISHAY
场效应管, MOSFET, P沟道, HEXDIP
(EN)INFINEON
场效应管, MOSFET
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 30 V, 0.038 ohm, 4.5 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -420 mA, -150 V, 2.05 ohm, -6 V, -4.5 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 2 A, 60 V, 0.15 ohm, 5 V, 1 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 2.1W, SOT-223
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 4.2A, SC-88
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.4 A, 50 V, 100 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.2 A, 60 V, 0.047 ohm, 10 V, 1.8 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -300 mV
(EN)
ROHM
晶体管, MOSFET, N沟道, 2.5 A, 45 V, 0.07 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, 低电压, P沟道, 3.2 A, -20 V, 125 mohm, -4.5 V, -2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 0.031 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.8 A, 55 V, 0.075 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.2 ohm, 10 V, 2 V
(EN)ROHM
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.025 ohm, 4.5 V, 300 mV
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 55 V, 0.16 ohm, 10 V, 2 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.055 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, P沟道, -2.5 A, -12 V, 0.044 ohm, -4.5 V, -300 mV
(EN)
