产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 42W,
VISHAY
晶体管, MOSFET, P沟道, 8.8 A, -60 V, 280 mohm, -10 V, -4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -14 A, -40 V, 36 mohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -60V, -15A, TO-252, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -150 V, 1.5 ohm, 10 V, 3.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 0.0075 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 40 A, 40 V, 8.8 mohm, 10 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0073 ohm, 10 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 7.5 mohm, 10 V, 1 V
(EN)
INFINEON
场效应管, MOSFET, N沟道
(EN)
VISHAY
晶体管, MOSFET, P沟道, 12 A, -60 V, 140 mohm, -10 V, -4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.4 A, 500 V, 3 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, P沟道
(EN)INFINEON
晶体管, MOSFET, P沟道, -9.7 A, -60 V, 0.2 ohm, -10 V, -1.5 V
(EN)
