产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 500mW,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 0.026Ω, 2.7A, SUPERSOT-3
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -620 mA, -60 V, 0.62 ohm, -10 V, -1.5 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 3 A, 30 V, 120 mohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2.4 A, -20 V, 52 mohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.2 A, 30 V, 0.054 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2.6 A, -12 V, 0.03 ohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -30 V, 80 mohm, -10 V, 20 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.9 A, 30 V, 0.053 ohm, 4.5 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, -2.4A, SuperSOT, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.092 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 55 mohm, -4.5 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1 A, -20 V, 300 mohm, -4.5 V, -600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 2A, SuperSOT, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.04 ohm, 4.5 V, 700 mV
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 350 mA, 60 V, 1 ohm, 10 V, 1.75 V
(EN)ROHM
晶体管, MOSFET, N沟道, 2 A, 60 V, 250 mohm, 4 V, 800 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, -620 mA, -60 V, 0.62 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -360 mA, -100 V, 1.3 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管 双极预偏置/数字, BRT, SOT-23
NEXPERIA
晶体管, MOSFET, P沟道, -170 mA, -50 V, 4.5 ohm, -10 V, -1.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.1 A, 12 V, 0.14 ohm, 4.5 V, 850 mV
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.1 A, 12 V, 0.14 ohm, 4.5 V, 850 mV
(EN)
