产品分类：场效应管MOSFET晶体管(600V以下),规格：功耗 Pd 1.5W,
VISHAY
场效应管, MOSFET, P通道, -30V, 0.01Ω, -8.8A
(EN)
VISHAY
晶体管, MOSFET, N沟道, 11.7 A, 30 V, 0.0062 ohm, 10 V, 1 V
(EN)
VISHAY
Transistor Polarity:P Channel
(EN)
VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -30 V, 0.0063 ohm, -10 V, -1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, 14A, SOIC
(EN)
ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.022 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, P沟道, -5.5 A, -30 V, 0.0193 ohm, -10 V, -2.5 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 5.6A, POWERPAK 1212, 整卷
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.6 A, -60 V, 54 mohm, -10 V, -3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 240 V, 2.8 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道+肖特基, 3.7 A, 30 V, 0.047 ohm, 4.5 V, 700 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.7 A, 100 V, 0.0854 ohm, 10 V, 3 V
(EN)ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.022 ohm, -10 V, -2.5 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 150V, 0.068Ω, 2.7A
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 500 mA, 500 V, 18 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 750 mA, 200 V, 1.7 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 300 mA, 250 V, 2.8 ohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 250 mA, 300 V, 6 ohm, 10 V, 2 V
(EN)
NXP
场效应管, N沟道, DMOS FET, 300V, 350mA, 3-SOT-223
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -200 V, 10 ohm, -10 V, -2.8 V
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -250 V, 10 ohm, -10 V, -2.8 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 340 mA, 240 V, 2.8 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.027 ohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.9 A, 30 V, 0.075 ohm, 1 V, 1 V
(EN)
