产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 TO-220,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 15 A, 55 V, 13 mohm, 5 V, 2.5 V
(EN)NTE ELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 60 V, 28 mohm, 10 V, 4 V
(EN)
MICROSEMI
场效应管, MOSFET, N沟道, 500V, 15A, TO-220
(EN)INFINEON
晶体管, MOSFET, N沟道, 13.5 A, 200 V, 0.16 ohm, 5 V, 1.6 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 120 A, 75 V, 0.0025 ohm, 10 V, 3.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 57 A, 100 V, 0.012 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 75 V, 11 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 19 A, 200 V, 140 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2.7 A, -500 V, 4.9 ohm, -10 V, -5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 12 A, 550 V, 299 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9 A, 550 V, 399 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 1.9 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 3.1 mohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 5 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 9.5 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 45 A, 80 V, 11.8 mohm, 10 V, 2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 17 A, 550 V, 0.18 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 70 A, 100 V, 0.0097 ohm, 10 V, 3 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 60V, 86A, TO-220-3
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 8A, TO-220
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 120 V, 4.5 ohm, 10 V, 5 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 7.5A, 500V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 500V, 4.5A TO-220
(EN)NTE ELECTRONICS
场效应管, MOSFET, N沟道, 100V, 14A, TO-220
(EN)
