产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 TO-220,
INFINEON
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0047 ohm, 10 V, 3.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 0.06 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 55 V, 35 mohm, 5 V, 2.5 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 150 A, 100 V, 0.0023 ohm, 10 V, 2.5 V
(EN)
STMICROELECTRONICS
场效应管, MOSFET
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11.5 A, -200 V, 360 mohm, -10 V, -5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 250V, 25.5A, TO-220
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 75 V, 0.0095 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 110 A, 100 V, 0.009 ohm, 10 V, 4 V
(EN)TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, TO-220-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0062 ohm, 10 V, 2.7 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0055 ohm, 10 V, 2.6 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 100 V, 0.0064 ohm, 10 V, 2.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 33 A, 250 V, 94 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 150 V, 6.2 mohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
(EN)STMICROELECTRONICS
功率MOSFET, N沟道 60V 30A
(EN)VISHAY
场效应管, N通道, MOSFET, 250V, 8.1A TO-220
(EN)INFINEON
晶体管, MOSFET, N沟道, 80 A, 55 V, 0.0056 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0025 ohm, 15 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 58 A, 100 V, 0.011 ohm, 10 V, 2.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 60 V, 60 mohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 0.0033Ω, 100A, TO-220-3
(EN)
