产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 TO-220,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5.4 A, 400 V, 1 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 35 A, 100 V, 45 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 30 V, 2.8 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 120 V, 0.0035 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 90 A, 40 V, 3.3 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.051 ohm, 10 V, 3 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 200V, 18A, TO-220
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 62 A, 33 V, 12.5 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11.5 A, -200 V, 360 mohm, -10 V, -5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, TO-220-3
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 70 V, 100 mohm, 10 V, 3 V
(EN)IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 62 A, 150 V, 0.04 ohm, 10 V, 5.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 14.1 A, 500 V, 0.35 ohm, 13 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 55 A, 60 V, 0.018 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 45 A, 60 V, 0.0052 ohm, 10 V, 2.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 500 V, 0.33 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 10 A, 80 V, 50 mohm, 10 V, 3 V
(EN)TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET, N沟道, 100 A, 80 V, 0.0076 ohm, 10 V, 2.8 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 100A, TO-220-3
(EN)VISHAY
晶体管, N沟道
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 120 V, 13 mohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 500 V, 0.73 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 38 A, 300 V, 0.056 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 40 A, 60 V, 6.5 mohm, 10 V, 3 V
(EN)
