产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOT-223,
INFINEON
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4 ohm, 10 V, 1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 10.7 A, 55 V, 40 mohm, 5 V, 1.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 0.092 ohm, 5 V, 1.68 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4 A, 55 V, 75 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.8 A, 100 V, 0.177 ohm, 10 V, 3 V
(EN)
VISHAY
MOSFET, P CHANNEL, -60V, -1.8A, SOT-223-4
(EN)INFINEON
晶体管, MOSFET, N沟道, 2 A, 55 V, 140 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.9 A, 60 V, 0.09 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3.3 A, 100 V, 0.075 ohm, 10 V, 1.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 830 mA, 250 V, 1.38 ohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.6 A, 30 V, 0.031 ohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 6.3 A, 30 V, 0.038 ohm, 4.5 V, 670 mV
(EN)NEXPERIA
晶体管, MOSFET, P沟道, -200 mA, -200 V, 10 ohm, -10 V, -2.8 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 3.8 A, 70 V, 130 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -260 mA, -250 V, 7.5 ohm, -10 V, -1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 2.8 A, 55 V, 0.075 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 100 V, 0.28 ohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 500 mA, 100 V, 4 ohm, 10 V, 2.4 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 700 mA, 60 V, 2 ohm, 10 V, 2.4 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 480 mA, -240 V, 11 ohm, -10 V, -1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.6 A, 100 V, 0.2 ohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 3.8 A, 60 V, 140 mohm, 10 V, 1 V
(EN)
NXP
场效应管, P沟道, DMOS FET, -300V, -210mA, 3-SOT-223
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 5 V, 2 V
(EN)
