产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 TO-263,
INFINEON
晶体管, MOSFET, P沟道, -120 A, -40 V, 0.0026 ohm, -10 V, -1.7 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -55 A, -60 V, 15 mohm, -10 V, -1 V
(EN)
INFINEON
场效应管, MOSFET, P沟道
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -60V, 18.5A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, P沟道, -19 A, -55 V, 0.1 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 9.3 A, 200 V, 0.3 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 8.5 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -42 A, -55 V, 0.02 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 46 A, 100 V, 23 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 23 A, -100 V, 117 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 64 A, 55 V, 14 mohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 31 A, 100 V, 0.031 ohm, 5 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0012 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 120 V, 0.0029 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 45A, D2-PAK
(EN)INFINEON
晶体管, MOSFET, P沟道, 64 A, -55 V, 20 mohm, -10 V, -4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, HEXFET, 60V, 79A, D2PAK
(EN)VISHAY
晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 200V, 44A, D2-PAK
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 33A, D2-PAK
INFINEON
晶体管, MOSFET, P沟道, -18.7 A, -60 V, 0.101 ohm, -10 V, -3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0072 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 150 A, 55 V, 3700 μohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -8.8 A, -60 V, 0.221 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0023 ohm, 10 V, 2.8 V
(EN)
