产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 TO-263,
ON SEMICONDUCTOR
MOSFET Transistor, N Channel, 45 A, 60 V, 0.021 ohm, 10 V, 2.8 V
(EN)
VISHAY
场效应管, P通道, MOSFET, -100V, 6.8A, D2-PAKT
(EN)
INFINEON
晶体管, MOSFET, N沟道, 47 A, 55 V, 22 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 1.3 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 2.8 A, -100 V, 1.2 ohm, -10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 100 V, 180 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 49 A, 55 V, 0.0175 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 260 A, 75 V, 2.1 mohm, 20 V, 4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 274 A, 40 V, 0.0014 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 31 A, 200 V, 75 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0009 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 160 A, 60 V, 3.3 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 55 V, 0.06 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 13.5 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 120 A, 100 V, 0.003 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.00117 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0017 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 24 A, 200 V, 100 mohm, 10 V, 5.5 V
(EN)INFINEON
晶体管, MOSFET, HEXFET, N沟道, 140 A, 100 V, 0.0056 ohm, 10 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 40 V, 0.0013 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 11 A, -60 V, 280 mohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 210 A, 60 V, 0.0024 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 62 A, 200 V, 26 mohm, 10 V, 5 V
(EN)
