产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 TO-252,
ROHM
晶体管, MOSFET, N沟道, 5 A, 60 V, 0.078 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.047 ohm, -10 V, -2.6 V
(EN)ROHM
晶体管, MOSFET, N沟道, 20 A, 100 V, 0.033 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -14 A, -40 V, 36 mohm, -10 V, -1.6 V
(EN)TOSHIBA
晶体管, MOSFET, P沟道, 5 A, -60 V, 170 mohm, -10 V, 2 V
(EN)TOSHIBA
晶体管, MOSFET, P沟道, 5 A, -60 V, 170 mohm, -10 V, 2 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 9 A, 100 V, 0.16 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, P沟道, -40 A, -30 V, 0.02 ohm, -10 V, -1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 45 A, 30 V, 0.012 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.009 ohm, 10 V, 1 V
(EN)ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 32 A, 40 V, 0.02 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 59 A, 55 V, 0.0111 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.019 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -13 A, -100 V, 0.205 ohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -18 A, -55 V, 0.11 ohm, -10 V, -2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 74 A, 75 V, 9.3 mohm, 10 V, 2.3 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 16.1 A, -30 V, 25 mohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 6.7 A, -12 V, 90 mohm, -4.5 V, -500 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 34 A, 100 V, 0.022 ohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 44 A, 100 V, 0.024 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 29 A, 100 V, 0.029 ohm, 10 V, 3.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -50 A, -40 V, 10.1 mohm, -10 V, -1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 14 A, -40 V, 0.036 ohm, 20 V, -1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 32 A, -40 V, 0.023 ohm, -10 V, -1.6 V
(EN)
