产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOT-23,
INFINEON
晶体管, MOSFET, P沟道, -4.3 A, -20 V, 0.042 ohm, -4.5 V, -1.1 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 72 mA, 350 V, 35 ohm, 0 V
(EN)
MICRO COMMERCIAL COMPONENTS
场效应管, MOSFET, N沟道, 60V, 115mA, SOT-23
(EN)TOSHIBA
晶体管, MOSFET, P沟道, 100 mA, -30 V, 12 ohm, -4 V, -1.7 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -5.8 A, -8 V, 0.028 ohm, -4.5 V, -1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 180 mohm, 4.5 V, 700 mV
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 1.2A
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 400mA, SOT-23
(EN)
RENESAS
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.142 ohm, -4.5 V
(EN)RENESAS
晶体管, MOSFET, P沟道, -1.8 A, -60 V, 0.158 ohm, -10 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -6 A, -20 V, 0.032 ohm, -4.5 V, -400 mV
(EN)RENESAS
晶体管, MOSFET, P沟道, -1.8 A, -30 V, 0.195 ohm, -4.5 V
(EN)
DIODES INC.
MOSFET Transistor, P Channel, -4.2 A, -20 V, 0.04 ohm, -4.5 V, -900 mV
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 3A, 40V, 750mW
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 20 V, 0.025 ohm, 4.5 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -1.6 A, -60 V, 285 mohm, -10 V, -1 V
(EN)INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -30V, -2.3 A, SOT-23
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.032 ohm, -4.5 V, -700 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236
(EN)MULTICOMP
场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 1.1 A, -30 V, 350 mohm, 10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 190 mA, 60 V, 2 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.4 A, -40 V, 0.064 ohm, -10 V, -1.2 V
(EN)
