产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOT-23,
ADVANCED POWER ELECTRONICS CORP
晶体管, MOSFET, N沟道, 3.5 A, 20 V, 0.075 ohm, 4.5 V, 500 mV
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 90 mA, -60 V, 14 ohm, -10 V, -3.5 V
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 4.6 A, 30 V, 47 mohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -7.1 A, -12 V, 0.0285 ohm, -4.5 V, -400 mV
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 20 V, 0.024 ohm, 4.5 V, 600 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 3 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV
(EN)
NEXPERIA
场效应管, N通道, DMOS FET, 20V, 1.05A, 3-SOT-2
(EN)DIODES INC.
晶体管, MOSFET, AEC-Q101, N沟道, 4.2 A, 20 V, 0.09 ohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 400 mA, -20 V, 800 mohm, -10 V, -1.9 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1 A, 60 V, 400 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 200 mA, 60 V, 2.7 ohm, 10 V, 1.2 V
(EN)NEXPERIA
场效应管, MOSFET, N沟道 通道, 30V, 1.9A, 3-SOT-23
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -600 mA, -20 V, 0.7 ohm, -4.5 V, -1 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -1.13 A, -30 V, 0.155 ohm, -10 V, -3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, P沟道, -30V, -3.6 A, SOT-23
(EN)
RENESAS
晶体管, MOSFET, N沟道, 1.5 A, 60 V, 0.173 ohm, 4.5 V
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 4A, SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道
(EN)INFINEON
晶体管, MOSFET, N沟道, 230 mA, 60 V, 1.7 ohm, 10 V, -2.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 mA, 240 V, 7.7 ohm, 10 V, 1.4 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 100 mA, 100 V, 10 ohm, 10 V, 2.4 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.046 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 73 mohm, -10 V, -1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 115 mA, 60 V, 1.2 ohm, 10 V, 2.1 V
(EN)
