产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOT-23,
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 1 A, -20 V, 0.148 ohm, -10 V, -1.9 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.2 A, -20 V, 0.07 ohm, -4.5 V, -720 mV
(EN)
NEXPERIA
场效应管, MOSFET, N沟道, 30V, 1.9A, 3-SOT-23, 整卷
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 190 mA, 100 V, 5 ohm, 5 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 500 mA, 60 V, 5 ohm, 10 V, 2.1 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 50V, 200mA SOT-23, 整卷
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 380 mA, 60 V, 1.19 ohm, 10 V, 2.3 V
(EN)
MULTICOMP
场效应管, MOSFET, N沟道, 60V, 1.2Ω, 115mA, SOT-23
(EN)VISHAY
场效应管, N通道, MOSFET, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -25V, 460mA, SOT-23, 整卷
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 8 V, 0.014 ohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 900 mA, 20 V, 220 mohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 20V, 900mA, SOT-23, 整卷
(EN)VISHAY
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.023 ohm, 10 V, 2.5 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -20V, 4.7A TO-236, 整卷
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 60V, 115mA SOT-23, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 60V, 280mA, SOT-23, 整卷
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 150 mA, 100 V, 3.5 ohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -120 mA, -25 V, 7.9 ohm, -4.5 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
(EN)MULTICOMP
场效应管, MOSFET, P沟道, -50V, 1.2Ω, -130mA, SOT-23-3
(EN)
MICRO COMMERCIAL COMPONENTS
场效应管, MOSFET, N沟道, 60V, 115mA, SOT-23, 整卷
(EN)INFINEON
场效应管, N通道, MOSFET, 30V, 3.4A, 3-SOT-23, 整卷
(EN)VISHAY
场效应管, MOSFET, P沟道, -30V, -4A
(EN)
MICROCHIP
芯片, 场效应管, MOSFET, 耗尽模式, 350V, 35Ω, 3-SOT-23, T/R
(EN)
