产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOT-23,
VISHAY
晶体管, MOSFET, N沟道, 8 A, 30 V, 0.02 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -2.8 A, -60 V, 0.125 ohm, 10 V, -2.5 V
(EN)
VISHAY
晶体管, MOSFET, 汽车, P沟道, -2.5 A, -60 V, 0.115 ohm, -10 V, -2.5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, -2.5A, SOT-23-3
(EN)TOSHIBA
晶体管, MOSFET, N沟道, 4 A, 30 V, 39 mohm, 10 V, 2.5 V
(EN)TOSHIBA
晶体管, MOSFET, N沟道, 200 mA, 60 V, 3 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -385 mA, -30 V, 1.25 ohm, -10 V, -2 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -185 mA, -60 V, 10 ohm, -4.5 V, -2 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 6 A, 30 V, 24 mohm, 10 V, 2.5 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, P沟道, 2.3 A, -20 V, 0.095 ohm, -4.5 V, -450 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, P沟道, 2.3 A, -20 V, 0.095 ohm, -4.5 V, -450 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 65 mohm, 4.5 V, 450 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.046 ohm, 10 V, 1 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.064 ohm, -10 V, -1 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -30 V, 0.064 ohm, -10 V, -1 V
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4 A, 20 V, 0.024 ohm, 4.5 V, 800 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4 A, -20 V, 0.045 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.055 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.055 ohm, -4.5 V, -600 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 850 mV
(EN)TAIWAN SEMICONDUCTOR
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.031 ohm, -4.5 V, -400 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.5 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 150 mA, 60 V, 5 ohm, 10 V, 2.4 V
(EN)
