产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOT-23,
DIODES INC.
晶体管, MOSFET, P沟道, 3.5 A, -30 V, 59 mohm, -10 V, -600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.6 A, -30 V, 0.063 ohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 180 mA, -60 V, 5 ohm, -10 V, -1.7 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 4.2 A, 20 V, 0.019 ohm, 4.5 V, 500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.092 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, P沟道, -230 mA, -30 V, 2.8 ohm, -4.5 V, -900 mV
(EN)
NEXPERIA
P CHANNEL, DMOS FET, -30V, -520MA, 3-SOT-23
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 300 mA, 60 V, 2 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 0.07 ohm, -4.5 V, -0.72 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 250 mohm, 10 V, 4 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 220 mohm, 10 V, 1 V
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 5.47 A, 20 V, 0.021 ohm, 10 V, 950 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 150 V, 0.113 ohm, 10 V, 2.5 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -80V, 2.2A TO-236
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 750 mA, 20 V, 0.075 ohm, 10 V, 1.7 V
(EN)DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -35 mA, -200 V, 80 ohm, -10 V, -1.5 V
(EN)
VISHAY
晶体管, N通道
(EN)
RENESAS
晶体管, MOSFET, P沟道, -3.3 A, -30 V, 0.054 ohm, -10 V
(EN)INTERNATIONAL RECTIFIER
P CHANNEL POWER MOSFET, HEXFET, -20V, -4.3A, SOT-23
(EN)
VISHAY
场效应管, MOSFET, P沟道, -3.2A, -30V, 1.25W
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 1.6 A, 60 V, 0.092 ohm, 10 V, 3 V
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 2.2 A, 20 V, 120 mohm, 4.5 V, 700 mV
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 50V, 200mA SOT-23
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 900 mA, 20 V, 220 mohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 1.95A, SOT-23
(EN)
