产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOIC,
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 30V, 18A, SOIC
(EN)
VISHAY
晶体管, MOSFET, N沟道, 34 A, 12 V, 2.1 mohm, 4.5 V, 400 mV
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 20 V, 0.0023 ohm, 20 V, 2.6 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30.5 A, 30 V, 0.0032 ohm, 10 V, 1.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 8.7 mohm, 10 V, 1.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 50A, SOIC
(EN)VISHAY
晶体管, MOSFET, P沟道, -8.7 A, -40 V, 0.011 ohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -30 V, 0.069 ohm, -10 V, -2.1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 11.3 mohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 16 A, 30 V, 0.0055 ohm, 10 V, 2.25 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 5.2 A, -30 V, 45 mohm, -10 V, -1 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -11.4 A, -30 V, 0.0195 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 10.5 A, -40 V, 15 mohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -9.2 A, -30 V, 15.6 mohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 5.3 A, -20 V, 60 mohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -12 A, -30 V, 10 mohm, -10 V, -1.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 10.9 A, 30 V, 20 mohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 14.5 A, 30 V, 0.007 ohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -14.5 A, -30 V, 0.0065 ohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 30 V, 7.5 mohm, 10 V, 1.7 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -30V, 15A, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 6.9 A, 100 V, 26 mohm, 10 V, 5.5 V
(EN)VISHAY
场效应管, MOSFET, N沟道, 30V, 16A, SOIC
(EN)
VISHAY
晶体管, MOSFET, N沟道+肖特基, 7.3 A, 30 V, 0.013 ohm, 10 V, 3 V
(EN)
