产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOIC,
INFINEON
场效应管, MOSFET, 整卷
(EN)
VISHAY
场效应管, MOSFET
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8 A, -20 V, 0.014 ohm, -4.5 V, -700 mV
(EN)
VISHAY
场效应管, MOSFET, P沟道, 8-SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13 A, -30 V, 7.7 mohm, -10 V, -1.9 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, -20A, SOIC-8, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 130 mohm, -4.5 V, -600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, -3.5A, SOIC-8, 整卷
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.9 A, 150 V, 280 mohm, 10 V, 5.5 V
(EN)
VISHAY
场效应管, MOSFET, P通道, -30V, 0.01Ω, -8.8A
(EN)VISHAY
场效应管, P通道, MOSFET, -30V, -8.1A, SOIC-8, 整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 9 A, 30 V, 0.0132 ohm, 10 V, 1.7 V
(EN)INFINEON
场效应管, MOSFET, N沟道, 17.2A, 30V
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
Transistor Polarity:P Channel
(EN)VISHAY
场效应管, MOSFET, N沟道, 10A, 30V, 2.5W
(EN)INFINEON
场效应管, MOSFET, N沟道, 8.3A, 100V SOIC-8
(EN)VISHAY
晶体管, MOSFET, P沟道, -10.5 A, -30 V, 0.0063 ohm, -10 V, -1 V
(EN)INFINEON
场效应管, MOSFET, P沟道, -700mA, -150V, 8-SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0063 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
MOSFET, P CHANNEL, -30V, 0.105OHM, -3.4A, SOIC-8
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.0092 ohm, 10 V, 1.9 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 16.4 A, 30 V, 0.0046 mohm, 10 V, 2.1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0063 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 15 A, 30 V, 0.0049 ohm, 10 V, 1.2 V
(EN)
