产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOIC,
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 100V, 4.5A, SOIC, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12.5 A, 30 V, 9.5 mohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 30 V, 0.03 ohm, 10 V, 1 V
(EN)INFINEON
场效应管, P通道, MOSFET, -30V, -16A, SOIC, 整卷
(EN)VISHAY
晶体管, MOSFET, P沟道, -16.1 A, -40 V, 0.018 ohm, -4.5 V, -1.2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 60 V, 0.017 ohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, -19.7A, SOIC-8
(EN)
VISHAY
MOSFET, P CHANNEL, -40V, -16.1A, SOIC-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 20 A, 30 V, 0.0031 ohm, 10 V, 2.32 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 100 V, 0.06 ohm, 10 V, 5.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 11 A, -30 V, 13.5 mohm, -10 V, -2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 12.5 mohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, 60V V(BR)DSS
(EN)
VISHAY
晶体管, MOSFET, N沟道, 2.85 A, 200 V, 65 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 9 A, -30 V, 17 mohm, -10 V, -1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 6.8 A, 100 V, 51 mohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 93 A, 30 V, 0.0027 ohm, 10 V, 1.63 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, -8A, SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13 A, 30 V, 8 mohm, 10 V, 1.8 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 150V, 0.068Ω, 2.7A
(EN)
INFINEON
场效应管, MOSFET, 整卷
(EN)INFINEON
晶体管, MOSFET, N沟道, 9 A, 40 V, 0.012 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, P沟道, -5.4 A, -20 V, 0.1 ohm, -2.7 V, -700 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, -10 A, -30 V, 0.02 ohm, -10 V, -1 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12.6 A, -30 V, 0.0067 ohm, -10 V, -1.5 V
(EN)
