产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOIC,
INFINEON
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, N沟道, 14 A, 30 V, 8.5 mohm, 10 V, 2.35 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0039 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0039 ohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -20 A, -30 V, 0.0039 ohm, -10 V, -1.8 V
(EN)INFINEON
场效应管, P通道, MOSFET, -30V, -20A, SOIC, 整卷
(EN)INFINEON
晶体管, MOSFET, P沟道, -16 A, -30 V, 0.0054 ohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -16 A, -30 V, 0.0054 ohm, -10 V, -1.8 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, -15A, SOIC
(EN)INFINEON
晶体管, MOSFET, P沟道, -12 A, -30 V, 0.01 ohm, -10 V, -1.8 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, 0.0136Ω, -9.8A, SOIC-8
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -9.2A, SOIC
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -9.2A, SOIC
(EN)INFINEON
晶体管, MOSFET, P沟道, -5.4 A, -30 V, 0.048 ohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -8 A, -30 V, 17 mohm, -10 V, -1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -6.5 A, -20 V, 0.026 ohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 7.9 A, -30 V, 35 mohm, -4.5 V, -1.3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -60 V, 150 mohm, -10 V, -1.6 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 75A, SO-8FL
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 93 A, 30 V, 0.0027 ohm, 10 V, 1.63 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 93 A, 30 V, 0.0027 ohm, 10 V, 1.63 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -20V, 10A, SOIC
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9.2 A, 40 V, 0.0103 ohm, 4.5 V, 1.85 V
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 40V, 0.0082Ω, 9.2A, SOIC-8
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 20 A, 30 V, 4.4 mohm, 10 V, 3 V
(EN)
