产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管封装类型 SOIC,
INFINEON
晶体管, MOSFET, P沟道, -15 A, -30 V, 5.9 mohm, -10 V, -1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -40V, 0.011Ω, -10.8A, SOIC-8
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.4 A, 40 V, 0.0117 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 6.2 A, -40 V, 41 mohm, -10 V, -3 V
(EN)VISHAY
P CHANNEL MOSFET, -8V, 13.7A, SOIC
(EN)INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0093 ohm, 10 V, 1.8 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 6.3 A, 80 V, 0.024 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 3 A, -60 V, 150 mohm, -10 V, -1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 18 A, 30 V, 0.0038 ohm, 10 V, 2.1 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 1.7 A, 45 V, 0.25 ohm, 5 V, 500 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -13.5 A, -20 V, 8.5 mohm, -4.5 V, -600 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.01 ohm, 10 V, 1 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 8.5 A, 60 V, 0.018 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 7.3 A, 30 V, 30 mohm, 10 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -3.4 A, -30 V, 0.105 ohm, -10 V, -1.8 V
(EN)INFINEON
场效应管, MOSFET, P沟道, -30V, -16A, SOIC
(EN)VISHAY
晶体管, MOSFET, N沟道, 12 A, 30 V, 0.017 ohm, 10 V, 2.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 16 A, 20 V, 0.004 ohm, 4.5 V, 600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -11 A, -40 V, 13 mohm, -10 V, -1.4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18 A, 40 V, 5 mohm, 4.5 V, 2.25 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.011 ohm, 4.5 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 20 V, 0.022 ohm, 4.5 V, 700 mV
(EN)VISHAY
晶体管, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, N沟道
(EN)
INFINEON
晶体管, MOSFET, P沟道, -15 A, -20 V, 0.0082 ohm, -4.5 V, -1.2 V
(EN)
