产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管极性 N沟道,
VISHAY
晶体管, MOSFET, N沟道, 9 A, 200 V, 0.4 ohm, 5 V, 2 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 98 A, 500 V, 0.05 ohm, 10 V, 5 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, LINEAR L2?, N沟道, 40 A, 500 V, 170 mohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 55 V, 0.016 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 40 V, 0.001 ohm, 10 V, 3.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 60 V, 0.0016 ohm, 10 V, 1.7 V
VISHAY
晶体管, MOSFET, N沟道, 5.2 A, 200 V, 0.8 ohm, 5 V, 2 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 7 A, 500 V, 1 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 240 A, 60 V, 0.0015 ohm, 10 V, 1 V
(EN)
SEMELAB
晶体管, MOSFET, N沟道, 16 A, 160 V, 750 mohm, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 67 A, 60 V, 0.009 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.15 ohm, 10 V, 2.8 V
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 40V, 0.0068OHM, 70A, TO-263AB-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 338 A, 60 V, 0.00115 ohm, 10 V, 3.7 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, 极性FET, N沟道, 16 A, 500 V, 400 mohm, 10 V, 5.5 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 55 V, 5 mohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 80V, 150A, TO-220-3
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 200 V, 150 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 600 mA, 200 V, 2 ohm, 10 V, 1.4 V
(EN)
IXYS SEMICONDUCTOR
晶体管, MOSFET, N沟道, 36 A, 500 V, 120 mohm, 10 V, 5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 100 V, 14 mohm, 10 V, 5.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 120 A, 30 V, 6 mohm, 10 V, 1 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 60V, 75A, TO-220AB-3
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 56 A, 25 V, 0.008 ohm, 4.5 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 5 V
(EN)
