产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管极性 N沟道,
VISHAY
场效应管, N通道, MOSFET, 100V, 14A, D2-PAK
(EN)
VISHAY
晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 960 mA, 200 V, 1.5 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0032 ohm, 10 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 10A, 30V, 2.5W
(EN)
INTERNATIONAL RECTIFIER
(EN)
RENESAS
晶体管, MOSFET, N沟道, 25 A, 100 V, 11 mohm, 10 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 8.3A, 100V SOIC-8
(EN)
VISHAY
N CHANNEL MOSFET, 20V, 200mA, SC-89
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 20V, 0.019OHM, 7A, MICROFET-6
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 55 V, 0.03 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 0.0063 ohm, 10 V, 1.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 31 A, 100 V, 0.034 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 20V, 5.1A, TSOP
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 25V, 100A, 0.0009Ω, SON-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 8 V, 0.019 ohm, 4.5 V, 350 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 60 V, 0.0035 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 75V, 16A POWERPAK
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0038 ohm, 8 V, 850 mV
(EN)
VISHAY
MOSFET, N CHANNEL, 200V, 960mA, SOT-223-4
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 14 A, 30 V, 0.0063 ohm, 10 V, 1.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0029OHM, 42A, POWER 56-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 20 V, 0.0015 ohm, 10 V, 2.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 80 V, 0.0073 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 500 V, 2.7 ohm, 13 V, 3 V
(EN)
