产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管极性 N沟道,
INFINEON
场效应管, MOSFET, N沟道, 100V, 1.6A SOT-23
(EN)
VISHAY
晶体管, MOSFET, N沟道, 5 A, 100 V, 0.028 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, N沟道
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 53 A, 30 V, 0.0067 ohm, 10 V, 2.2 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, N沟道, 200 mA, 60 V, 1.7 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.2 A, 20 V, 0.07 ohm, 4.5 V, 1.2 V
(EN)
VISHAY
MOSFET, N CHANNEL, 60V, 240mA, SOT-323-3
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.00465 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 200 V, 40 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0085 ohm, 10 V, 2.8 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 1.1 A, 20 V, 160 mohm, 4 V, 1.1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.005 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 300 A, 60 V, 0.00066 ohm, 10 V, 2.8 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 30 A, 80 V, 0.0155 ohm, 10 V, 2 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18.2 A, 30 V, 0.0078 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 47 A, 30 V, 0.0094 ohm, 4.5 V, 1.3 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 80 A, 55 V, 8 mohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 18 A, 200 V, 180 mohm, 10 V, 4 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 2.9 A, 20 V, 0.045 ohm, 8 V, 850 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 35 A, 100 V, 0.0225 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6 A, 30 V, 0.023 ohm, 10 V, 2.5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 30A TO-220AB
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 23 A, 100 V, 65 mohm, 10 V, 3 V
(EN)
