产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管极性 N沟道,
ON SEMICONDUCTOR/FAIRCHILD
MOSFET, N CHANNEL, 30V, 0.0081OHM, 22A, POWER 56-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 36 A, 40 V, 0.0027 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 1.2 A, 20 V, 250 mohm, 4.5 V, 700 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 27 A, 55 V, 35 mohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 6A, POWERPAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0009 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2.3 A, 100 V, 0.2 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 20V, 25A, SC70-6
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道 2A
(EN)INFINEON
晶体管, MOSFET, N沟道, 11 A, 30 V, 0.0093 ohm, 10 V, 1.8 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 10 A, 30 V, 0.0077 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 3.1 A, 55 V, 0.065 ohm, 10 V, 2 V
(EN)
INFINEON
MOSFET, N CHANNEL, 25V, 44A, PQFN-5
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 335 mA, 55 V, 2.3 ohm, 4.5 V, 1 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 30 V, 950 μohm, 10 V, 1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 30 V, 28 mohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19 A, 200 V, 90 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0012 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 85 A, 40 V, 0.0018 ohm, 10 V, 2.2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 3.8W, 8-1212
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 70 A, 120 V, 0.0062 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.8 A, 200 V, 800 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 160 A, 30 V, 3.1 mohm, 10 V, 1.9 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 32 A, 30 V, 0.017 ohm, 10 V, 1.7 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道, 200V, 18A, TO-220AB
(EN)
