产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管极性 N沟道,
INFINEON
晶体管, MOSFET, N沟道, 17 A, 100 V, 0.105 ohm, 10 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 35 A, 30 V, 1.2 mohm, 8 V, 1.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0116 ohm, 10 V, 1.5 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 24 A, 60 V, 0.034 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 101 A, 40 V, 0.0036 ohm, 10 V, 3.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 59 A, 100 V, 25 mohm, 10 V, 5.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 95 A, 30 V, 0.0043 ohm, 11.5 V, 2.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 46 A, 60 V, 0.013 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3.2 A, 12 V, 0.034 ohm, 4.5 V, 650 mV
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0013 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 90 A, 30 V, 0.0033 ohm, 10 V, 2.2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 40 V, 0.0027 ohm, 10 V, 3 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 22 A, 60 V, 0.026 ohm, 10 V, 1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 50 A, 20 V, 7.5 mohm, 10 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 6.7 A, 150 V, 0.041 ohm, 10 V, 4.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 32 A, 55 V, 6.5 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 50 A, 40 V, 0.0085 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 3 A, 30 V, 0.054 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 30 V, 140 mohm, 4.5 V, 1.75 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 60 A, 25 V, 0.0042 ohm, 4.5 V, 1.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 15 A, 100 V, 100 mohm, 10 V, 2 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 23 A, 40 V, 0.02 ohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 60 V, 0.0037 ohm, 10 V, 1.7 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 82 A, 60 V, 0.0056 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.5 A, 500 V, 1.5 ohm, 10 V, 4 V
(EN)
