产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管极性 N沟道,
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 250 A, 60 V, 0.0011 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.5 A, 20 V, 30 mohm, 4.5 V, 1.2 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 42 A, 25 V, 0.0173 ohm, 3.3 V, 1.35 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 136 A, 30 V, 0.0015 ohm, 10 V, 2.2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0053 ohm, 10 V, 2.7 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 50 A, 60 V, 0.0077 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4 A, 150 V, 0.101 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 200 V, 0.11 ohm, 10 V, 2 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 30V V(BR)DSS
(EN)
ON SEMICONDUCTOR/FAIRCHILD
N CHANNEL MOSFET, 60V, 400mA, TO-92
(EN)
INFINEON
晶体管, MOSFET, N沟道, 9.9 A, 30 V, 12 mohm, 4.5 V, 1.1 V
(EN)
PANASONIC ELECTRONIC COMPONENTS
晶体管, MOSFET, N沟道, 2 A, 20 V, 0.085 ohm, 4 V, 850 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 5 A, 25 V, 0.019 ohm, 8 V, 1.2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 52 A, 30 V, 0.0046 ohm, 10 V, 2.1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 14 A, 60 V, 0.054 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 90 A, 30 V, 0.0025 ohm, 10 V, 1.6 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0009 ohm, 10 V, 2 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 15 A, 80 V, 0.059 ohm, 1.7 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 36 A, 200 V, 0.027 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 64 A, 55 V, 14 mohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.0105 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 9 A, 100 V, 0.18 ohm, 10 V, 2.6 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 11 A, 60 V, 0.092 ohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 18 A, 200 V, 125 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 71 A, 30 V, 0.0055 ohm, 10 V, 1.48 V
(EN)
