产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管极性 N沟道,
NEXPERIA
晶体管, MOSFET, N沟道, 40 A, 40 V, 0.00484 ohm, 10 V, 1.7 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.032 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 3.9 mohm, 10 V, 2.8 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 2A, SOT-223
(EN)
INFINEON
场效应管, MOSFET, N沟道, HEXFET, 60V, 79A, D2PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 65 A, 30 V, 0.0075 ohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 94 A, 200 V, 23 mohm, 10 V, 5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 2.2 A, 60 V, 0.054 ohm, 10 V, 1.75 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.7 A, 60 V, 200 mohm, 5 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 25 V, 0.0019 ohm, 4.5 V, 1.1 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 19 A, 60 V, 0.0038 ohm, 10 V, 2 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 200V, 44A, D2-PAK
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 30V, 64A TO-220AB
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 69 A, 30 V, 0.0032 ohm, 10 V, 2.1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 27 A, 150 V, 70 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 34 A, 200 V, 0.028 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 33 mohm, 4.5 V, 950 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.142 ohm, 10 V, 2 V
(EN)INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 33A, D2-PAK
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 49 A, 40 V, 0.002 ohm, 10 V, 1.9 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 500 V, 0.21 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.1 A, 100 V, 0.102 ohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 31.8 A, 30 V, 0.0205 ohm, 4.5 V, 1.62 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 39 A, 200 V, 66 mohm, 10 V, 5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
