产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管极性 N沟道,
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道
(EN)
INFINEON
晶体管, MOSFET, N沟道, 269 A, 75 V, 0.0017 ohm, 10 V, 3.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 44 A, 200 V, 54 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 116 A, 30 V, 0.007 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.7 A, 400 V, 850 mohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 52 A, 200 V, 0.041 ohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 110 A, 60 V, 0.0042 ohm, 10 V, 3.7 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 35 A, 25 V, 0.0065 ohm, 10 V, 1.8 V
(EN)
VISHAY
场效应管, N通道, MOSFET, 250V, 14A SMD-220
(EN)
VISHAY
晶体管, MOSFET, N沟道, 30 A, 60 V, 28 mohm, 5 V, 2 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 27 A, 40 V, 0.0019 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 35 A, 100 V, 0.02 ohm, 10 V, 1.7 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 19 A, 500 V, 0.16 ohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 240mA, TO-236
(EN)
INFINEON
晶体管, MOSFET, N沟道, 70 A, 100 V, 0.0094 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 62 A, 200 V, 0.022 ohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 8.7 A, 20 V, 22 mohm, 4.5 V, 700 mV
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.025 ohm, 10 V, 3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 6.4 A, 100 V, 125 mohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 100 V, 0.0023 ohm, 10 V, 3.5 V
(EN)
DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 2.4 A, 20 V, 100 mohm, 4.5 V, 1 V
(EN)VISHAY
场效应管, MOSFET, N沟道
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 13.6 A, 60 V, 0.088 ohm, 10 V, 2.5 V
(EN)
