产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管极性 N沟道,
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 44 A, 30 V, 0.0082 ohm, 8 V, 1.3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 10 V, 4 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, TO-220AB
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 55 V, 11 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10.5 A, 500 V, 0.33 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 21 A, 500 V, 0.135 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 47A, D2-PAK
(EN)VISHAY
晶体管, MOSFET, N沟道, 18 A, 500 V, 250 mohm, 10 V, 5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0015 ohm, 4.5 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 84 A, 60 V, 0.012 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 600 mA, 20 V, 0.24 ohm, 4.5 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 75 A, 40 V, 0.0015 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 30 A, 55 V, 12 mohm, 10 V, 2 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7 A, 120 V, 160 mohm, 10 V, 3 V
(EN)
VISHAY
晶体管, N沟道
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 265 mA, 60 V, 2.1 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 4.3 A, 60 V, 55 mohm, 10 V, 2.2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 76 A, 80 V, 0.0026 ohm, 10 V, 3.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 350 mA, 240 V, 4 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 75 V, 0.00734 ohm, 20 V, 4 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 10.7 A, 55 V, 40 mohm, 5 V, 1.5 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 540 mA, 20 V, 550 mohm, 4.5 V, 1.6 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 30V, 0.0027Ω, 93A, SOIC-8
(EN)
VISHAY
场效应管, MOSFET, N沟道
(EN)
