产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管极性 N沟道,
INFINEON
晶体管, MOSFET, N沟道, 72 A, 100 V, 3.7 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18.5 A, 500 V, 0.17 ohm, 13 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 1.3 mohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 98 A, 55 V, 8 mohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 50V, 30A, TO-220AB
(EN)
VISHAY
场效应管, MOSFET, N沟道, 200V, 2.6A, POWERPAK
(EN)TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 60V, 0.0076Ω, 100A, TO-220-3
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 120 V, 0.0065 ohm, 10 V, 3 V
(EN)NEXPERIA
晶体管, MOSFET, TrenchMOS, N沟道, 37 A, 80 V, 0.0205 ohm, 10 V, 1.7 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 100V, 57A, TO-220AB
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 60 A, 300 V, 0.033 ohm, 10 V, 3.75 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 23 A, 550 V, 0.13 ohm, 10 V, 3 V
INFINEON
晶体管, MOSFET, N沟道, 42 A, 55 V, 0.011 ohm, 10 V, 3 V
(EN)
MICROCHIP
晶体管, MOSFET, N沟道, 136 mA, 450 V, 20 ohm, 0 V
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 4.9 A, 20 V, 0.027 ohm, 4.5 V, 650 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 20 A, 40 V, 0.0047 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 93 A, 30 V, 3.5 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 60 A, 250 V, 33 mohm, 10 V, 5 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 60 V, 3.6 mohm, 10 V, 3 V
(EN)ROHM
晶体管, MOSFET, N沟道, 2.5 A, 45 V, 0.07 ohm, 10 V, 2.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 12 A, 550 V, 0.27 ohm, 10 V, 3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N 通道, MOSFET, 55V, 110A, D2-PAK
(EN)
INFINEON
晶体管, MOSFET, N沟道, 2 A, 55 V, 140 mohm, 10 V, 2 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 68 A, 100 V, 0.0108 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 100 A, 80 V, 0.0028 ohm, 10 V, 2.8 V
(EN)
