产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管极性 N沟道,
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0011 ohm, 10 V, 1.8 V
(EN)
NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 70 A, 25 V, 0.00525 ohm, 10 V, 1.8 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 180 A, 60 V, 0.0016 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 44 A, 250 V, 0.058 ohm, 10 V, 5 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 30 V, 2.3 mohm, 10 V, 1.7 V
(EN)NEXPERIA
晶体管, MOSFET, NextPowerS3, N沟道, 60 A, 25 V, 0.00646 ohm, 10 V, 1.76 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 4.5 A, 560 V, 0.85 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 110 A, 60 V, 0.00325 ohm, 10 V, 3.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.004 ohm, 10 V, 2.7 V
(EN)
NEXPERIA
场效应管, N通道, DMOS FET, 20V, 1.05A, 3-SOT-2
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 187W, TO-220-3
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 150 A, 60 V, 0.002 ohm, 10 V, 1.7 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 50 A, 40 V, 2.3 mohm, 10 V, 1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 21 A, 560 V, 0.16 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 16 A, 60 V, 0.022 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 40 A, 30 V, 3 mohm, 10 V, 1.8 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 55 A, 30 V, 0.014 ohm, 16 V, 1.7 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 180 mA, 200 V, 10 ohm, 5 V, 1.5 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 33 A, 100 V, 0.044 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 190 A, 100 V, 0.0033 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 20 A, 550 V, 250 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 80 A, 100 V, 0.0074 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 80 V, 0.0018 ohm, 10 V, 3 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 70 A, 80 V, 0.0084 ohm, 10 V, 2.8 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 89 A, 100 V, 8.16 mohm, 10 V, 3 V
(EN)
