产品分类：场效应管MOSFET晶体管(600V以下),规格：晶体管极性 P沟道,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -12 A, -60 V, 0.11 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -12 A, -20 V, 0.0067 ohm, -4.5 V, -900 mV
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, P沟道, -2.6 A, -100 V, 0.15 ohm, -10 V, -2 V
(EN)
INFINEON
场效应管, MOSFET, P沟道, -30V, -12A, SOIC
(EN)VISHAY
晶体管, MOSFET, P沟道, -90 A, -40 V, 0.0075 ohm, -10 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -55 V, 0.175 ohm, -10 V, -4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -18 A, -55 V, 110 mohm, -10 V, -4 V
(EN)
ROHM
晶体管, MOSFET, AEC-Q101, P沟道, -2 A, -45 V, 0.13 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -40V, 8.4mA
(EN)
INFINEON
晶体管, MOSFET, P沟道, 2.2 A, -150 V, 240 mohm, 10 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -4.5 A, -20 V, 0.03 ohm, -4.5 V, -1.5 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -3.3 A, -30 V, 0.054 ohm, -10 V
(EN)
INTERNATIONAL RECTIFIER
P CHANNEL POWER MOSFET, HEXFET, -20V, -4.3A, SOT-23
(EN)
VISHAY
场效应管, MOSFET, P沟道, -3.2A, -30V, 1.25W
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -10 A, -20 V, 0.0085 ohm, -4.5 V, -600 mV
(EN)STMICROELECTRONICS
晶体管, MOSFET, P沟道, -24 A, -30 V, 28 mohm, -10 V, -1 V
(EN)VISHAY
场效应管, MOSFET, P沟道, -40V, 4.5A, SOIC
(EN)VISHAY
MOSFET, P CHANNEL, -40V, -8.7A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, P沟道, -9 A, -20 V, 0.085 ohm, -1.8 V, -400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 4mA
(EN)
INFINEON
晶体管, MOSFET, P沟道, -30 A, -60 V, 0.069 ohm, -10 V, -3 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, P沟道, -11 A, -55 V, 175 mohm, -10 V, -4 V
(EN)
DIODES INC.
晶体管, MOSFET, P沟道, 6.4 A, -40 V, 60 mohm, 10 V, -1 V
(EN)ON SEMICONDUCTOR
场效应管, MOSFET, P沟道, -30V, 1.95A, SOT-23
(EN)
