
VISHAY
场效应管, MOSFET, P沟道, -40V, 18.6A, SOIC

VISHAY
晶体管, MOSFET, P沟道, -6.5 A, -200 V, 0.8 ohm, -10 V, -2 V

VISHAY
晶体管, MOSFET, P沟道, -16.3 A, -100 V, 0.115 ohm, -10 V

VISHAY
MOSFET, P CHANNEL, -50V, -9.9A, TO-252-3

INFINEON
晶体管, MOSFET, P沟道, 13 A, -150 V, 290 mohm, -10 V, -4 V

VISHAY
场效应管, MOSFET, P沟道, -200V, 3.8A, SOIC

TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -2.2 A, -12 V, 0.044 ohm, -4.5 V, -600 mV

INTERNATIONAL RECTIFIER
场效应管, P通道, MOSFET, -55V, 18A, D-PAK

INFINEON
场效应管, MOSFET

VISHAY
场效应管, P通道, MOSFET, -200V, 6.5A, D2-PAK

VISHAY
场效应管, MOSFET, P沟道

INFINEON
晶体管, MOSFET, P沟道, -9.8 A, -30 V, 13.6 mohm, -10 V, -1.9 V

INFINEON
MOSFET, P CHANNEL, -30V, -24A, PQFN-8

ROHM
晶体管, MOSFET, P沟道, -2.5 A, -30 V, 0.08 ohm, -10 V, -2.5 V

ROHM
晶体管, MOSFET, P沟道, -3.5 A, -20 V, 0.05 ohm, -4.5 V, -2 V

VISHAY
晶体管, P沟道

VISHAY
MOSFET, P CHANNEL, -30V, -35A, POWERPAK 1212-8

ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 0.069Ω, 3A, SOIC-8

ROHM
晶体管, MOSFET, P沟道, -4 A, -12 V, 0.022 ohm, -4.5 V, -1 V

ROHM
晶体管, MOSFET, P沟道, -2.5 A, -12 V, 0.044 ohm, -4.5 V, -1 V

ROHM
晶体管, MOSFET, P沟道, -7.5 A, -30 V, 0.0167 ohm, -10 V, -2.5 V

ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.022 ohm, -10 V, -2.5 V

ROHM
晶体管, MOSFET, P沟道, -5 A, -30 V, 0.036 ohm, -10 V, -2.5 V

ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.036 ohm, -10 V, -2.5 V

ROHM
晶体管, MOSFET, P沟道, -1.4 A, -20 V, 0.22 ohm, -4.5 V, -1 V