产品分类：场效应管MOSFET晶体管(600V以下),搜索词：186,
INFINEON
晶体管, MOSFET, P沟道, -13 A, -100 V, 0.205 ohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -18 A, -55 V, 0.11 ohm, -10 V, -2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 73 A, 100 V, 0.011 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 51 A, 55 V, 0.0111 ohm, 10 V, 2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 180 A, 40 V, 0.0025 ohm, 10 V, 1.4 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 74 A, 75 V, 9.3 mohm, 10 V, 2.3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 120 A, 75 V, 3.6 mohm, 10 V, 2.3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 55 V, 5.5 mohm, 10 V, 2.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 100 A, 75 V, 6 mohm, 10 V, 2.3 V
(EN)NEXPERIA
晶体管, MOSFET, N沟道, 78 A, 75 V, 8.6 mohm, 10 V, 2.3 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 30V, 60A, SON
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 9.8 A, 20 V, 11 mohm, 4.5 V, 1 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 910 mA, 30 V, 460 mohm, 4.5 V, 450 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 910 mA, 30 V, 460 mohm, 4.5 V, 450 mV
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 11 A, 30 V, 8.5 mohm, 10 V, 1.5 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 5.1 A, 150 V, 0.034 ohm, 10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 150V, 5A, 8-PQFN
(EN)
INFINEON
晶体管, MOSFET, N沟道, 26 A, 20 V, 2 mohm, 4.5 V, 800 mV
(EN)INFINEON
晶体管, MOSFET, N沟道, 26 A, 20 V, 2 mohm, 4.5 V, 800 mV
(EN)
INFINEON
晶体管, MOSFET, N沟道, 6.3 A, 20 V, 21 mohm, 4.5 V, 0.9 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 5.8A, 20V, 2W
(EN)
VISHAY
场效应管, MOSFET, P沟道, -5.7A, -30V, 1.5W
(EN)
VISHAY
场效应管, MOSFET, N沟道, 3.9A, 40V, 1.1W
(EN)VISHAY
晶体管, MOSFET, P沟道, -4.6 A, -40 V, 0.061 ohm, -10 V, -2 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 4.4 A, 60 V, 0.058 ohm, 10 V, 1.5 V
(EN)
