产品分类：场效应管MOSFET晶体管(600V以下),
SEMELAB
晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 56 A, 200 V, 40 mohm, 10 V, 4 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 0.045 ohm, -10 V, -2.5 V
(EN)
TAIWAN SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3.5 A, 30 V, 0.046 ohm, 10 V, 1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 120 A, 75 V, 5.8 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 97 A, 100 V, 0.0072 ohm, 20 V, 4 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 60 A, 30 V, 0.0018 ohm, 10 V, 2.5 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 12 A, -100 V, 300 mohm, -10 V, 4 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 200V, 24A, TO-220AB
(EN)
VISHAY
晶体管, MOSFET, P沟道, 4.3 A, -200 V, 800 mohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 43 A, 200 V, 0.054 ohm, 10 V, 5 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, N沟道
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -3.5 A, -12 V, 0.066 ohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 30 A, 60 V, 0.023 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 60 A, 40 V, 0.0019 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.5 A, 20 V, 0.068 ohm, 4.5 V, 700 mV
(EN)
INTERNATIONAL RECTIFIER
场效应管, MOSFET, 30V, 18A, SOIC
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 73 mohm, -10 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 58 A, 60 V, 0.0096 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 200V, 52A, D2-PAK
(EN)INFINEON
晶体管, MOSFET, N沟道, 56 A, 100 V, 0.0111 ohm, 10 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 34 A, 12 V, 2.1 mohm, 4.5 V, 400 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 75 A, 55 V, 0.0052 ohm, 10 V, 2.9 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -2.4 A, -20 V, 55 mohm, -4.5 V, -1 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 90 A, 30 V, 9 mohm, 10 V, 3 V
(EN)
