产品分类：场效应管MOSFET晶体管(600V以下),
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 100 mA, 50 V, 6 ohm, 4 V, 1.3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 18 A, 40 V, 5 mohm, 4.5 V, 2.25 V
(EN)
NEXPERIA
晶体管, MOSFET, 沟槽式, N沟道, 240 mA, 60 V, 2.2 ohm, 10 V, 1.6 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 60 V, 0.0057 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -20 V, 0.063 ohm, -4.5 V, -1.3 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -60V, 5A, SOIC
(EN)
INFINEON
晶体管, MOSFET, N沟道, 5 A, 200 V, 0.6 ohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, 增强模式, N沟道, 1.1 A, 60 V, 500 mohm, 10 V, 2.1 V
(EN)
VISHAY
MOSFET, P-CH, -40V, -30A, POWERPAK SO
(EN)
TOSHIBA
晶体管, MOSFET, 功率, N沟道, 35 A, 60 V, 0.0043 ohm, 10 V, 1.3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 2.5 A, 35 V, 0.075 ohm, 10 V, 2.6 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -4.7 A, -20 V, 0.054 ohm, -4.5 V, -900 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -18 A, -20 V, 0.0073 ohm, -4.5 V, -1 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 12 A, 60 V, 0.06 ohm, 10 V, 2 V
(EN)
INFINEON
场效应管, MOSFET, N沟道, 40V, 195A, TO-220AB-3
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, NexFET™, N沟道, 170 A, 60 V, 0.0033 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 49 A, 40 V, 7.8 mohm, 10 V, 1.2 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 10.8 A, 30 V, 0.011 ohm, 4.5 V, 3 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 20 A, 200 V, 180 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 39 A, 80 V, 0.0225 ohm, 10 V, 2.5 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.1 A, 200 V, 0.605 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 350 mA, -20 V, 0.5 ohm, -4.5 V, -1 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 59 A, 60 V, 8 mohm, 10 V, 3 V
(EN)
NEXPERIA
晶体管, MOSFET, N沟道, 2.1 A, 60 V, 0.096 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 35 A, 100 V, 0.0225 ohm, 10 V, 4 V
(EN)
