产品分类：场效应管MOSFET晶体管(600V以下),
INFINEON
晶体管, MOSFET, N沟道, 2.6 A, 150 V, 185 mohm, 10 V, 5 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0018 ohm, 10 V, 1.8 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 16 A, 100 V, 0.115 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 100 V, 0.0068 ohm, 10 V, 1.85 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 4.3 A, 100 V, 540 mohm, 10 V, 4 V
(EN)
DIODES INC.
晶体管, MOSFET, N沟道, 270 mA, 60 V, 5 ohm, 10 V, 2.4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 30 A, 30 V, 0.0073 ohm, 10 V, 1.5 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, -3 A, -12 V, 0.054 ohm, -4.5 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 2 A, 400 V, 2.8 ohm, 10 V, 5 V
(EN)
TEXAS INSTRUMENTS
场效应管, MOSFET, N沟道, 100V, 100A, SON-8
(EN)
VISHAY
晶体管, MOSFET, P沟道, 9.8 A, -20 V, 0.0085 ohm, 12 V, -1.4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 850 mA, 200 V, 1.1 ohm, 10 V, 2 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 78 A, 30 V, 0.0027 ohm, 10 V, 2.2 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, P沟道, -3 A, -60 V, 0.13 ohm, -10 V, -4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 62 A, 150 V, 0.0103 ohm, 20 V, 5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 46 A, 20 V, 0.00155 ohm, 10 V, 1 V
(EN)
RENESAS
晶体管, MOSFET, P沟道, -2.1 A, -20 V, 0.142 ohm, -4.5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 38.3 A, 30 V, 0.006 ohm, 10 V, 1.2 V
(EN)
INFINEON
场效应管, MOSFET
(EN)
INFINEON
晶体管, MOSFET, P沟道, -2.2 A, -150 V, 0.24 ohm, -10 V, -5 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 18 A, 100 V, 48 mohm, 10 V, 2.5 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -140 mA, -250 V, 8 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 21 A, 30 V, 3.6 mohm, 10 V, 1.4 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, 5.6 A, -60 V, 500 mohm, -10 V, -4 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 19 A, 30 V, 0.024 ohm, 8 V, 1.3 V
(EN)
