
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 300 mA, 600 V, 15 ohm, 10 V, 3.75 V

ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道

ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道

VISHAY
功率场效应管, MOSFET, N沟道, 7.9 A, 650 V, 0.52 ohm, 10 V, 2 V

VISHAY
功率场效应管, MOSFET, N沟道, 5.6 A, 650 V, 0.755 ohm, 10 V, 2 V

INFINEON
功率场效应管, MOSFET, N沟道, 22.4 A, 600 V, 0.162 ohm, 10 V, 4 V

VISHAY
功率场效应管, MOSFET, N沟道, 8 A, 600 V, 0.45 ohm, 10 V, 2 V

INFINEON
功率场效应管, MOSFET, N沟道, 15 A, 650 V, 0.115 ohm, 10 V, 3.5 V

INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, -1.4 V

STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 250 mA, 800 V, 13 ohm, 30 V, 3.75 V

INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 25 ohm, 10 V, 1.9 V

INFINEON
功率场效应管, MOSFET, N沟道, 120 mA, 600 V, 45 ohm, 10 V, 1.9 V

WOLFSPEED
Silicon Carbide Power MOSFET, N Channel, 30.8 A, 1.2 kV, 0.075 ohm, 15 V, 2.5 V

WOLFSPEED
功率场效应管, MOSFET, C3M SiC, N沟道, 35 A, 1 kV, 0.065 ohm, 15 V, 2.1 V

INFINEON
功率场效应管, MOSFET, N沟道, 50 A, 600 V, 0.034 ohm, 10 V, 3.5 V

INFINEON
功率场效应管, MOSFET, N沟道, 46 A, 650 V, 0.04 ohm, 10 V, 3.5 V

WOLFSPEED
功率场效应管, MOSFET, N沟道, 22 A, 1 kV, 0.12 ohm, 15 V, 2.1 V

IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 60 A, 800 V, 140 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 44 A, 800 V, 190 mohm, 10 V, 5 V

IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 27 A, 800 V, 320 mohm, 10 V, 4.5 V

IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 64 A, 600 V, 96 mohm, 10 V, 5 V

INFINEON
功率场效应管, MOSFET, N沟道, 11.1 A, 600 V, 0.27 ohm, 10 V, 3 V

TEXAS INSTRUMENTS
双路场效应管, MOSFET, 双N沟道, 7 A, 20 V, 0.024 ohm, 4.5 V, 900 mV

ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 15 A, 40 V, 0.028 ohm, 10 V, 1 V

ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 9 A, 60 V, 0.072 ohm, 10 V, 1 V