产品分类：MOSFET晶体管,规格：MSL -,
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 1.3 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, 双N沟道, 27 A, 12 V, 0.0023 ohm, 4.5 V, 1.3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 11 A, 600 V, 0.28 ohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5.2 A, 800 V, 1.8 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.98 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 7 A, 650 V, 0.6 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 600 V, 2 ohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 1.5 kV, 7 ohm, 10 V, 4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 2.8 ohm, 10 V, 4 V
(EN)TAIWAN SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 8 ohm, 10 V, 3.5 V
(EN)
DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.4 A, 30 V, 0.038 ohm, 10 V, 1 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)VISHAY
功率场效应管, MOSFET, N沟道, 33 A, 600 V, 0.083 ohm, 10 V, 2 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.1 A, 900 V, 5 ohm, 10 V, 3.75 V
(EN)
INFINEON
功率场效应管, MOSFET, N沟道, 20.7 A, 650 V, 190 mohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)
NEXPERIA
双路场效应管, MOSFET, N和P沟道, 725 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual N Channel, 17 A, 60 V, 0.031 ohm, 10 V, 3 V
(EN)DIODES INC.
双路场效应管, MOSFET, N和P沟道, 3.7 A, 20 V, 0.027 ohm, 4.5 V, 400 mV
(EN)
VISHAY
双路场效应管, MOSFET, LITTLE FOOT, 双N沟道, 5.8 A, 30 V, 0.0155 ohm, 10 V, 3 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 1.5 A, 30 V, 340 mohm, 4.5 V, 1.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双N沟道, 3.4 A, 80 V, 0.09 ohm, 10 V, 2.5 V
(EN)
ROHM
双路场效应管, MOSFET, 双P沟道, -5.5 A, -12 V, 0.015 ohm, -4.5 V, -1 V
(EN)
SEMELAB
双路场效应管, MOSFET, N和P沟道, 8 A, 160 V
(EN)
