产品分类：MOSFET晶体管,规格：工作温度最高值 150°C,
TEXAS INSTRUMENTS
电源模块, NEXFET对, 同步降压, 25V, 65A, SON-8
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 2.7 A, 20 V, 80 mohm, 4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6.5 A, 20 V, 25 mohm, 4.5 V, 1 V
(EN)DIODES INC.
双路场效应管, MOSFET, 增强模式, N和P沟道, 3.1 A, 30 V, 0.12 ohm, 10 V, -1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 2.7 A, 20 V, 0.069 ohm, 4.5 V, 900 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 6 A, 40 V, 0.021 ohm, 10 V, 1.9 V
(EN)
NXP
场效应管, MOSFET阵列, N与P沟道, 300V, 340MA, 8-SOIC
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3 A, 20 V, 0.05 ohm, 4.5 V, 900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, 双N沟道, POWERTRENCH, 30V, 30A, POWER56, 整卷
(EN)
VISHAY
场效应管, MOSFET, 双路 N 通道, 30V, 0.0093Ω
(EN)ADVANCED POWER ELECTRONICS CORP
双路场效应管, MOSFET, N和P沟道, 7 A, 30 V, 0.028 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -20V, 2.3A, SuperSOT整卷
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 680 mA, 25 V, 450 mohm, 4.5 V, 800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -12V, -700mA, SC-70, 整卷
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 9.3 A, 30 V, 14 mohm, 10 V, 1.6 V
INFINEON
场效应管, MOSFET
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 510 mA, 60 V, 1 ohm, 10 V, 2.1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 50V, 510mA, SuperSOT, 整卷
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 30V, 16A, POWERPAIR-6
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, PNP + N MOSFET, 224 mA, 20 V, 0.65 ohm, 4.5 V, 1 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -20V, -4.5A, POWERPAK SC-70
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -9.2 A, -12 V, 0.017 ohm, -4.5 V, -0.9 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -500 mA, -20 V, 1.02 ohm, -4.5 V, -700 mV
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -2.3 A, -30 V, 0.165 ohm, -10 V, -1 V
(EN)
INFINEON
MOSFET, DUAL N CHANNEL, 25V, 188A, PQFN-
(EN)
