产品分类：MOSFET晶体管,规格：工作温度最高值 175°C,
NEXPERIA
晶体管, MOSFET, N沟道, 52 A, 40 V, 0.0093 ohm, 10 V, 3 V
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 3 A, 60 V, 120 mohm, 5 V, 1.68 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 62 A, 30 V, 12 mohm, 10 V, 2 V
(EN)
INTERNATIONAL RECTIFIER
场效应管, N通道, MOSFET, 55V, 29A TO-220AB
(EN)
ON SEMICONDUCTOR
晶体管, MOSFET, P沟道, 12 A, -60 V, 0.155 ohm, -10 V, -2.8 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 10 A, 1.2 kV, 0.45 ohm, 18 V, 4 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 22 A, 1.2 kV, 0.16 ohm, 18 V, 4 V
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 4 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 14 A, 1.2 kV, 0.28 ohm, 18 V, 4 V
(EN)
ROHM
Silicon Carbide Power MOSFET, N Channel, 21 A, 650 V, 0.12 ohm, 18 V, 5.6 V
(EN)
ROHM
功率场效应管, MOSFET, N沟道, 29 A, 650 V, 0.12 ohm, 18 V, 4 V
(EN)ROHM
Silicon Carbide Power MOSFET, N Channel, 30 A, 650 V, 0.08 ohm, 18 V, 5.6 V
(EN)ROHM
Silicon Carbide Power MOSFET, N Channel, 72 A, 1.2 kV, 0.03 ohm, 18 V, 5.6 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 55 A, 1.2 kV, 0.04 ohm, 18 V, 5.6 V
(EN)
GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 10A, TO-263
(EN)
GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 50A, TO-247AB
(EN)ROHM
Silicon Carbide Power MOSFET, N Channel, 93 A, 650 V, 0.022 ohm, 18 V, 5.6 V
(EN)ROHM
Silicon Carbide Power MOSFET, N Channel, 39 A, 650 V, 0.06 ohm, 18 V, 5.6 V
(EN)GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 5A, TO-263
(EN)GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 5A, TO-247AB
(EN)GENESIC SEMICONDUCTOR
碳化硅结晶体管, 1.2KV, 10A, TO-247AB
(EN)ROHM
Silicon Carbide Power MOSFET, N Channel, 17 A, 1.2 kV, 0.16 ohm, 18 V, 5.6 V
(EN)
ROHM
功率场效应管, MOSFET, 碳化硅 (SiC), N沟道, 3.7 A, 1.7 kV, 1.15 ohm, 18 V, 2.8 V
(EN)ROHM
功率场效应管, MOSFET, N沟道, 31 A, 1.2 kV, 0.08 ohm, 18 V, 5.6 V
(EN)ROHM
Silicon Carbide Power MOSFET, N Channel, 70 A, 650 V, 0.03 ohm, 18 V, 5.6 V
(EN)
