产品分类：MOSFET晶体管,规格：功耗 Pd 100W,
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 9 A, 200 V, 400 mohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 30 V, 0.0018 ohm, 10 V, 1.8 V
(EN)
STMICROELECTRONICS
晶体管, MOSFET, N沟道, 7.5 A, 500 V, 800 mohm, 10 V, 4 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 28 A, 30 V, 0.01 ohm, 10 V, 1.2 V
(EN)
RENESAS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 12 ohm, 15 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0131 ohm, 10 V, 1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 50 A, 100 V, 0.0125 ohm, 10 V, 1.7 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 25 A, 100 V, 30 mohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 48 A, 60 V, 0.02 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 73 A, 100 V, 0.0073 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 8 A, 650 V, 0.9 ohm, 10 V, 4 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 48 A, 60 V, 25 mohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 18 A, 200 V, 100 mohm, 10 V, 4.9 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 70 A, 80 V, 0.0084 ohm, 10 V, 2.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 16.5 A, -100 V, 190 mohm, -10 V, -4 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2 ohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -70 A, -30 V, 0.005 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR
晶体管, MOSFET, N沟道, 32 A, 100 V, 30 mohm, 10 V, 4 V
(EN)ROHM
晶体管, MOSFET, N沟道, 55 A, 100 V, 0.012 ohm, 10 V, 2.5 V
(EN)IXYS SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 4 A, 800 V, 3 ohm, 10 V, 5.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 4.5 A, 600 V, 2 ohm, 10 V, 4 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0059 ohm, 10 V, 1.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 40 A, 30 V, 0.0053 ohm, 10 V, 1.2 V
(EN)TOSHIBA
功率场效应管, MOSFET, N沟道, 4 A, 1 kV, 3 ohm, 10 V, 3.5 V
(EN)RENESAS
功率场效应管, MOSFET, N沟道, 2.5 A, 1.5 kV, 12 ohm, 15 V
(EN)
