产品分类：MOSFET晶体管,规格：功耗 Pd 125W,
VISHAY
晶体管, MOSFET, N沟道, 8 A, 500 V, 850 mohm, 10 V, 4 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 25 A, 250 V, 0.05 ohm, 10 V, 3 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 75 V, 0.0037 ohm, 10 V, 3.1 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 375 A, 100 V, 0.0028 ohm, 10 V, 2.7 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 375 A, 100 V, 0.0028 ohm, 10 V, 2.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 35 A, 250 V, 0.032 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 375 A, 40 V, 0.0007 ohm, 10 V, 2.8 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 10 A, 400 V, 550 mohm, 10 V, 4 V
(EN)
SEMELAB
晶体管, MOSFET, N沟道, 8 A, 160 V, 1.5 ohm, 1.5 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 160 A, 75 V, 0.0018 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, N沟道, 18 A, 200 V, 180 mohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 67 A, 150 V, 0.009 ohm, 10 V, 4 V
(EN)INFINEON
晶体管, MOSFET, AEC-Q101, N沟道, 124 A, 100 V, 0.0028 ohm, 10 V, 2.7 V
(EN)
INFINEON
晶体管, MOSFET, P沟道, -90 A, -40 V, 0.0036 ohm, -10 V, -1.7 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 16 A, 600 V, 0.2 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 600 V, 0.168 ohm, 10 V, 3 V
(EN)
WOLFSPEED
功率场效应管, MOSFET, N沟道, 19 A, 1.2 kV, 0.16 ohm, 20 V, 2.6 V
(EN)
NTE ELECTRONICS
场效应管, MOSFET, N沟道, 1KV, 3.1A, TO-220
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 320 mohm, 10 V, 5 V
(EN)NTE ELECTRONICS
场效应管, MOSFET, N沟道, 800V, 4A, TO-220
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 11 A, 650 V, 380 mohm, 10 V, 3 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.6 A, 800 V, 1.5 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 3.5 A, 600 V, 850 mohm, 10 V, 3.75 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 19 A, 600 V, 0.16 ohm, 10 V, 4 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 17 A, 650 V, 0.15 ohm, 10 V, 4 V
(EN)
