产品分类：MOSFET晶体管,规格：功耗 Pd 1.4W,
DIODES INC.
晶体管, MOSFET, N沟道, 4.2 A, 30 V, 24 mohm, 10 V, 1.5 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -4.2 A, -20 V, 0.04 ohm, -4.5 V, -900 mV
(EN)DIODES INC.
晶体管, MOSFET, 低电压, N沟道, 4 A, 20 V, 60 mohm, 4.5 V, 800 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 4.2 A, -20 V, 45 mohm, -4.5 V, -500 mV
(EN)
VISHAY
MOSFET, N CHANNEL, 30V, 9.5A, SOIC-8
(EN)
VISHAY
晶体管, MOSFET, N沟道, 13.5 A, 30 V, 0.007 ohm, 10 V, 3 V
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, N沟道, 3.6 A, 12 V, 0.063 ohm, 4.5 V, 850 mV
(EN)
TEXAS INSTRUMENTS
晶体管, MOSFET, P沟道, -5.4 A, -12 V, 0.029 ohm, -4.5 V, -650 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, -3.3 A, -20 V, 0.06 ohm, -4.5 V, -600 mV
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 3.5 A, -30 V, 59 mohm, -10 V, -600 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双N沟道, 3.7 A, 20 V, 68 mohm, 1 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, 3.1 A, -20 V, 0.06 ohm, -1 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3.7 A, 20 V, 0.037 ohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3.7 A, 20 V, 0.037 ohm, 4.5 V, 1 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, N和P沟道, 3.7 A, 20 V, 0.037 ohm, 4.5 V, 1 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
TRANSISTOR ARRAY
(EN)ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -3.6 A, -20 V, 0.04 ohm, -4.5 V, -500 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
双路场效应管, MOSFET, 双P沟道, -2.6 A, -20 V, 0.095 ohm, -4.5 V, -600 mV
(EN)
INFINEON
双路场效应管, MOSFET, N和P沟道, 4 A, 30 V, 0.05 ohm, 10 V, 1 V
(EN)
VISHAY
双路场效应管, MOSFET, N和P沟道, 3.9 A, 20 V, 0.048 ohm, 4.5 V, 1.5 V
(EN)VISHAY
双路场效应管, MOSFET, N和P沟道, 3.9 A, 20 V, 0.048 ohm, 4.5 V, 1.5 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 3.7 A, 30 V, 0.047 ohm, 10 V, 2.2 V
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.092 ohm, -10 V, -1.2 V
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -2.9 A, -30 V, 0.092 ohm, -10 V, -1.2 V
(EN)
VISHAY
场效应管, MOSFET, 双N沟道, 60V, SOIC
(EN)
