产品分类：MOSFET晶体管,规格：功耗 Pd 20W,
VISHAY
晶体管, MOSFET, N沟道, 1.5 A, 400 V, 3.6 ohm, 10 V, 4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 4 A, 650 V, 1.2 ohm, 10 V, 3 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 3 A, -100 V, 1.2 ohm, -10 V, -4 V
(EN)
TOSHIBA
晶体管, MOSFET, N沟道, 5 A, 60 V, 100 mohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 650 V, 0.79 ohm, 10 V, 3 V
(EN)
ROHM
晶体管, MOSFET, N沟道, 22 A, 60 V, 0.018 ohm, 10 V, 3 V
(EN)
SEMELAB
晶体管, MOSFET, P沟道, 4 A, -100 V, 600 mohm, -10 V, -4 V
(EN)
ROHM
晶体管, MOSFET, P沟道, -39 A, -30 V, 0.0061 ohm, -10 V, -2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 39 A, 40 V, 0.005 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 39 A, 30 V, 0.0033 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, P沟道, -14 A, -60 V, 0.06 ohm, -10 V, -3 V
(EN)ROHM
晶体管, MOSFET, N沟道, 3 A, 200 V, 0.62 ohm, 10 V, 5.2 V
(EN)ROHM
晶体管, MOSFET, N沟道, 10 A, 100 V, 0.095 ohm, 10 V, 2.5 V
(EN)VISHAY
晶体管, MOSFET, P沟道, 1.75 A, -200 V, 3 ohm, -10 V, -4 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 2.4 A, 600 V, 3.3 ohm, 10 V, 3.75 V
(EN)
ON SEMICONDUCTOR
功率场效应管, MOSFET, N沟道, 100 mA, 1.5 kV, 100 ohm, 10 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 1 A, 600 V, 4.4 ohm, 10 V, 3.75 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 5 A, 500 V, 0.73 ohm, 10 V, 3 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 5 A, 600 V, 0.84 ohm, 10 V, 3 V
(EN)ROHM
晶体管, MOSFET, P沟道, -16 A, -45 V, 0.035 ohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, N沟道, 1.5KV, 100Ω, TO-220F-3
(EN)ROHM
晶体管, MOSFET, N沟道, 17.5 A, 100 V, 0.075 ohm, 10 V, 2.5 V
(EN)ROHM
晶体管, MOSFET, N沟道, 20 A, 45 V, 0.02 ohm, 10 V, 2.5 V
(EN)STMICROELECTRONICS
晶体管, MOSFET, N沟道, 2.5 A, 525 V, 2.1 ohm, 10 V, 3.75 V
(EN)ROHM
晶体管, MOSFET, N沟道, 20 A, 100 V, 0.033 ohm, 10 V, 2.5 V
(EN)
