产品分类：MOSFET晶体管,规格：功耗 Pd 2.5W,
VISHAY
晶体管, MOSFET, P沟道, -7.6 A, -30 V, 0.024 ohm, -10 V
(EN)
VISHAY
晶体管, MOSFET, P沟道, -50 A, -60 V, 0.012 ohm, -10 V, -3 V
(EN)
VISHAY
场效应管, MOSFET, N沟道, 60V, 14A, IPAK
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 8 A, -20 V, 24 mohm, -4.5 V, -700 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 20 A, -30 V, 0.0038 ohm, -10 V, 1.8 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, P沟道, -30V, 11mA
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 8 A, 60 V, 20 mohm, 10 V, 2.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -8.8 A, -30 V, 15 mohm, -10 V, -1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 13 A, 30 V, 0.008 ohm, 10 V, 1.8 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 5.3 A, -30 V, 0.042 ohm, -10 V, -1.7 V
(EN)
INFINEON
晶体管, MOSFET, N沟道, 100 A, 40 V, 0.0011 ohm, 10 V, 2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -20 A, -30 V, 3.9 mohm, -10 V, -1.8 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 16 A, -12 V, 7 mohm, -4.5 V, -900 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 11 A, -30 V, 0.0108 ohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -6.2 A, -40 V, 0.025 ohm, -10 V, -3 V
(EN)INFINEON
晶体管, MOSFET, P沟道, 4.6 A, -30 V, 70 mohm, -10 V, -3 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 10 A, 60 V, 14 mohm, 10 V, 2.4 V
(EN)INFINEON
晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
(EN)
MICROCHIP
功率场效应管, MOSFET, N沟道, 300 mA, 650 V, 8 ohm, 0 V
(EN)
STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 250 mA, 800 V, 13 ohm, 30 V, 3.75 V
(EN)
MICROCHIP
场效应管, MOSFET, N沟道, 650V, 0.3A, TO-252AA-3
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 800V, 1.8mA
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 4.9 ohm, 10 V, 5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
功率场效应管, MOSFET, N沟道, 1.8 A, 800 V, 4.9 ohm, 10 V, 5 V
(EN)STMICROELECTRONICS
功率场效应管, MOSFET, N沟道, 250 mA, 800 V, 13 ohm, 30 V, 3.75 V
(EN)
