产品分类：MOSFET晶体管,规格：功耗 Pd 1.1W,
DIODES INC.
晶体管, MOSFET, P沟道, -3 A, -60 V, 125 mohm, -10 V, -3 V
(EN)
VISHAY
双路场效应管, MOSFET, 双N沟道, 2.9 A, 30 V, 0.072 ohm, 10 V, 1 V
(EN)
ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 4 A, 20 V, 45 mohm, 4.5 V, 1.2 V
(EN)DIODES INC.
晶体管, MOSFET, P沟道, 1.6 A, -100 V, 350 mohm, -10 V, -2 V
(EN)
VISHAY
场效应管, MOSFET, P沟道, -40V, 4.5A, SOIC
(EN)ON SEMICONDUCTOR
双路场效应管, MOSFET, N和P沟道, 2.9 A, 20 V, 0.058 ohm, 4.5 V, 600 mV
(EN)
VISHAY
双路场效应管, MOSFET, 双P沟道, -4.9 A, -20 V, 0.025 ohm, -2.5 V, -1.4 V
(EN)VISHAY
双路场效应管, MOSFET, 双N沟道, 4.4 A, 20 V, 0.032 ohm, 4.5 V, 1 V
(EN)
VISHAY
晶体管, MOSFET, N沟道, 3.6 A, 30 V, 0.049 ohm, 10 V, 2.2 V
(EN)
VISHAY
晶体管, P沟道
(EN)DIODES INC.
晶体管, MOSFET, N沟道, 5.4 A, 20 V, 40 mohm, 4.5 V, 700 mV
(EN)
VISHAY
晶体管, MOSFET, P沟道, -3.9 A, -20 V, 0.041 ohm, -2.5 V, -1.4 V
(EN)VISHAY
晶体管, MOSFET, P沟道, -3.5 A, -30 V, 73 mohm, -10 V, -1 V
(EN)VISHAY
场效应管, MOSFET, 双P沟道
(EN)
VISHAY
场效应管, MOSFET, P沟道, -30V, 2.7A TO-236, 整卷
(EN)
VISHAY
晶体管, P沟道
(EN)
VISHAY
MOSFET, DUAL N CHANNEL, 20V, 4.4A, CHIPFET-8
(EN)
VISHAY
场效应管, MOSFET, 双P沟道, -30V, 0.01Ω, -5.3A, SOIC-8, 整卷
(EN)
ON SEMICONDUCTOR
Dual MOSFET, Dual P Channel, -2.9 A, -20 V, 64 mohm, -4.5 V, -1.5 V
(EN)
ON SEMICONDUCTOR
MOSFET Transistor, P Channel, -2.5 A, -60 V, 72 mohm, -10 V, -3 V
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 7.2 A, 30 V, 0.03 ohm, 10 V, 1.6 V
(EN)
VISHAY
MOSFET, P CHANNEL, -20V, -4.9A, SOIC-8
(EN)
ON SEMICONDUCTOR
场效应管, MOSFET, 双P沟道, -20V, 1206A, 整卷
(EN)VISHAY
双路场效应管, MOSFET, 双P沟道, -7.4 A, -12 V, 0.018 ohm, -1.8 V, 400 mV
(EN)
VISHAY
场效应管, MOSFET, 双P沟道, -30V, 4.9A
(EN)
