产品分类：MOSFET晶体管,规格：功耗 Pd 500mW,
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 2 A, -20 V, 0.06 ohm, -4.5 V, -800 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 3 A, 20 V, 35 mohm, 4.5 V, 850 mV
(EN)
ON SEMICONDUCTOR/FAIRCHILD
场效应管, MOSFET, N沟道, 30V, 2.7A, SSOT
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 20 V, 70 mohm, 4.5 V, 900 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.7 A, 30 V, 0.065 ohm, 10 V, 1.6 V
(EN)INFINEON
晶体管, MOSFET, N沟道, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -30 V, 180 mohm, -10 V, -2 V
(EN)INFINEON
晶体管, MOSFET, BRT, N沟道, 300 mA, 60 V, 1.6 ohm, 10 V, 2.1 V
ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, N沟道, 1.3 A, 20 V, 0.11 ohm, 4.5 V, 700 mV
(EN)INFINEON
晶体管, MOSFET, P沟道, -2 A, -30 V, 0.062 ohm, -10 V, -1.5 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, 1 A, -20 V, 410 mohm, -4.5 V, -600 mV
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.25 A, -60 V, 170 mohm, -10 V, 20 V
(EN)ON SEMICONDUCTOR/FAIRCHILD
晶体管, MOSFET, P沟道, -1.3 A, -20 V, 0.122 ohm, -4.5 V, -900 mV
(EN)
INFINEON
双路场效应管, MOSFET, N和P, 2.3 A, 30 V, 0.044 ohm, 10 V, 1.6 V
(EN)
INFINEON
双路场效应管, MOSFET, N和P, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V
(EN)INFINEON
双路场效应管, MOSFET, 双P沟道, -2 A, -30 V, 0.062 ohm, -10 V, -1.5 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, -2 V
(EN)
NEXPERIA
双路场效应管, MOSFET, 双P沟道, -550 mA, -20 V, 0.67 ohm, -4.5 V, -800 mV
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, 2 V
(EN)NEXPERIA
双路场效应管, MOSFET, 双N沟道, 800 mA, 20 V, 0.29 ohm, 4.5 V, 750 mV
(EN)INFINEON
双路场效应管, MOSFET, N和P, 1.5 A, 20 V, 0.108 ohm, 4.5 V, 950 mV
(EN)INFINEON
双路场效应管, MOSFET, 双N沟道, 1.5 A, 20 V, 0.108 ohm, 4.5 V, 950 mV
(EN)INFINEON
双路场效应管, MOSFET, 互补晶体管, N和P沟道, 1.5 A, 20 V, 0.108 ohm, 4.5 V, 950 mV
(EN)INFINEON
双路场效应管, MOSFET, 互补晶体管, N和P沟道, 1.4 A, 30 V, 0.119 ohm, 10 V, 1.6 V
(EN)INFINEON
功率场效应管, MOSFET, N沟道, 21 mA, 600 V, 280 ohm, 10 V, 2 V
(EN)
